RQ3G110ATTB

RQ3G110ATTB Rohm Semiconductor


datasheet?p=RQ3G110AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: PCH -40V -35A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.14 EUR
6000+ 1.1 EUR
Mindestbestellmenge: 3000
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Technische Details RQ3G110ATTB Rohm Semiconductor

Description: PCH -40V -35A, HSMT8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V.

Weitere Produktangebote RQ3G110ATTB nach Preis ab 1.13 EUR bis 2.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ3G110ATTB RQ3G110ATTB Hersteller : ROHM Semiconductor datasheet?p=RQ3G110AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET Pch -40V -35A, HSMT8, Power MOSFET
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.52 EUR
10+ 2.09 EUR
100+ 1.67 EUR
250+ 1.62 EUR
500+ 1.39 EUR
1000+ 1.2 EUR
3000+ 1.13 EUR
Mindestbestellmenge: 2
RQ3G110ATTB RQ3G110ATTB Hersteller : Rohm Semiconductor datasheet?p=RQ3G110AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -40V -35A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V
auf Bestellung 8426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.1 EUR
100+ 1.67 EUR
500+ 1.42 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 7