RQ3G120BJFRATCB ROHM Semiconductor
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.67 EUR |
| 10+ | 1.37 EUR |
| 100+ | 1.09 EUR |
| 3000+ | 0.93 EUR |
| 6000+ | 0.91 EUR |
| 9000+ | 0.88 EUR |
| 24000+ | 0.86 EUR |
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Technische Details RQ3G120BJFRATCB ROHM Semiconductor
Description: PCH -40V -12A, HSMT8AG, POWER MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 12A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 279µA, Supplier Device Package: 8-HSMT (3.2x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote RQ3G120BJFRATCB nach Preis ab 0.80 EUR bis 2.80 EUR
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RQ3G120BJFRATCB | Hersteller : Rohm Semiconductor |
 Description: PCH -40V -12A, HSMT8AG, POWER MOPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 12A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 279µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3G120BJFRATCB | Hersteller : ROHM |
Description: ROHM - RQ3G120BJFRATCB - Leistungs-MOSFET, p-Kanal, 40 V, 12 A, 0.048 ohm, HSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 40W Bauform - Transistor: HSMT Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: To Be Advised |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ3G120BJFRATCB | Hersteller : Rohm Semiconductor |
Description: PCH -40V -12A, HSMT8AG, POWER MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 12A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 279µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
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