RQ3L090GNTB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.84 EUR |
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Technische Details RQ3L090GNTB Rohm Semiconductor
Description: MOSFET N-CH 60V 9A/30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 300µA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V.
Weitere Produktangebote RQ3L090GNTB nach Preis ab 0.84 EUR bis 2.25 EUR
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RQ3L090GNTB | Hersteller : ROHM Semiconductor |
MOSFETs Nch 60V 30A Middle Power MOSFET |
auf Bestellung 5150 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3L090GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 9A/30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 300µA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
auf Bestellung 17670 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3L090GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24.5nC On-state resistance: 21.4mΩ Power dissipation: 20W Drain current: 30A Pulsed drain current: 36A |
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