RQ3L090GNTB Rohm Semiconductor


datasheet?p=RQ3L090GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details RQ3L090GNTB Rohm Semiconductor

Description: MOSFET N-CH 60V 9A/30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 300µA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V.

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RQ3L090GNTB RQ3L090GNTB ROHM Semiconductor datasheet?p=RQ3L090GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Nch 60V 30A Middle Power MOSFET
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Lieferzeit 10-14 Tag (e)
2+1.95 EUR
10+1.59 EUR
100+1.2 EUR
500+1.08 EUR
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RQ3L090GNTB RQ3L090GNTB Rohm Semiconductor datasheet?p=RQ3L090GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
auf Bestellung 17670 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.68 EUR
13+1.71 EUR
100+1.17 EUR
500+1 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RQ3L090GNTB datasheet?p=RQ3L090GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
MOSFETs Nch 60V 30A Middle Power MOSFET
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.95 EUR
10+1.59 EUR
100+1.2 EUR
500+1.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RQ3L090GNTB datasheet?p=RQ3L090GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
auf Bestellung 17670 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
13+1.71 EUR
100+1.17 EUR
500+1 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH