RQ3L120BJFRATCB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
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Technische Details RQ3L120BJFRATCB Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 273µA, Supplier Device Package: 8-HSMT (3.2x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote RQ3L120BJFRATCB nach Preis ab 0.73 EUR bis 3.36 EUR
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RQ3L120BJFRATCB | ROHM Semiconductor |
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive |
auf Bestellung 2795 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3L120BJFRATCB | Rohm Semiconductor |
Description: PCH -60V -12A, HSMT8AG, POWER MO Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 273µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3L120BJFRATCB | ROHM |
Description: ROHM - RQ3L120BJFRATCB - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.106 ohm, HSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 40W Bauform - Transistor: HSMT Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: To Be Advised |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RQ3L120BJFRATCB |
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Hersteller: ROHM Semiconductor
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
auf Bestellung 2795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.87 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.88 EUR |
| 3000+ | 0.74 EUR |
| 6000+ | 0.73 EUR |
| RQ3L120BJFRATCB |
|
Hersteller: Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 11+ | 2.07 EUR |
| 25+ | 1.74 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.17 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.95 EUR |
| RQ3L120BJFRATCB |
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Hersteller: ROHM
Description: ROHM - RQ3L120BJFRATCB - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.106 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 40W
Bauform - Transistor: HSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.106ohm
SVHC: To Be Advised
Description: ROHM - RQ3L120BJFRATCB - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.106 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 40W
Bauform - Transistor: HSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.106ohm
SVHC: To Be Advised
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)