Produkte > ROHM SEMICONDUCTOR > RQ3N060ATTB1
RQ3N060ATTB1

RQ3N060ATTB1 Rohm Semiconductor

rq3n060attb1-e.pdf Hersteller: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RQ3N060ATTB1 Rohm Semiconductor

Description: PCH -80V -18A, HSMT8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V.

Weitere Produktangebote RQ3N060ATTB1 nach Preis ab 0.92 EUR bis 3.1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ3N060ATTB1 RQ3N060ATTB1 Hersteller : ROHM Semiconductor rq3n060attb1-e.pdf MOSFETs HSMT8 P-CH 80V 6A
auf Bestellung 2688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.1 EUR
10+1.99 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.97 EUR
3000+0.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RQ3N060ATTB1 RQ3N060ATTB1 Hersteller : Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH