| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.15 EUR |
| 3000+ | 1.09 EUR |
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Technische Details RQ3N060ATTB1 ROHM Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V.
Weitere Produktangebote RQ3N060ATTB1 nach Preis ab 1.18 EUR bis 3.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RQ3N060ATTB1 | Rohm Semiconductor |
 Description: PCH -80V -18A, HSMT8, POWER MOSFPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V |
auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3N060ATTB1 |
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Hersteller: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.33 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.18 EUR |