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RQ3P045ATTB1

RQ3P045ATTB1 ROHM Semiconductor

rq3p045attb1-e.pdf Hersteller: ROHM Semiconductor
MOSFET RQ3P045AT is a low on-resistance MOSFET suitable for switching and load switches.
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.15 EUR
100+ 1.72 EUR
250+ 1.58 EUR
500+ 1.43 EUR
1000+ 1.3 EUR
3000+ 1.13 EUR
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Technische Details RQ3P045ATTB1 ROHM Semiconductor

Description: PCH -100V -14.5A POWER MOSFET: R, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc), Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V.

Weitere Produktangebote RQ3P045ATTB1 nach Preis ab 1.23 EUR bis 2.6 EUR

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RQ3P045ATTB1 RQ3P045ATTB1 Hersteller : Rohm Semiconductor rq3p045attb1-e.pdf Description: PCH -100V -14.5A POWER MOSFET: R
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.16 EUR
100+ 1.72 EUR
500+ 1.45 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 7
RQ3P045ATTB1 RQ3P045ATTB1 Hersteller : Rohm Semiconductor rq3p045attb1-e.pdf Description: PCH -100V -14.5A POWER MOSFET: R
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V
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