RQ5E030AJTCL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.32 EUR |
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Technische Details RQ5E030AJTCL Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V.
Weitere Produktangebote RQ5E030AJTCL nach Preis ab 0.32 EUR bis 1.09 EUR
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RQ5E030AJTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
auf Bestellung 13933 Stücke: Lieferzeit 21-28 Tag (e) |
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RQ5E030AJTCL | Hersteller : ROHM Semiconductor |
MOSFET Nch 30V 3Ad Si MOSFET |
auf Bestellung 5478 Stücke: Lieferzeit 14-28 Tag (e) |
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| RQ5E030AJTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 6A Case: TSMT3 Drain-source voltage: 30V Drain current: 3A On-state resistance: 109mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RQ5E030AJTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 6A Case: TSMT3 Drain-source voltage: 30V Drain current: 3A On-state resistance: 109mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |