RQ5E035ATTCL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 3.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
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Technische Details RQ5E035ATTCL Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V.
Weitere Produktangebote RQ5E035ATTCL nach Preis ab 0.22 EUR bis 0.94 EUR
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RQ5E035ATTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V |
auf Bestellung 116255 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E035ATTCL | Hersteller : ROHM Semiconductor |
MOSFET Pch -30V -3.5A Power MOSFET |
auf Bestellung 31136 Stücke: Lieferzeit 14-28 Tag (e) |
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| RQ5E035ATTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RQ5E035ATTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |