RQ5E040AJTCL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.28 EUR |
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Technische Details RQ5E040AJTCL Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V.
Weitere Produktangebote RQ5E040AJTCL nach Preis ab 0.31 EUR bis 1.23 EUR
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RQ5E040AJTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
auf Bestellung 8578 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E040AJTCL | Hersteller : ROHM Semiconductor |
MOSFET NPN Low VCE(sat) Transistor |
auf Bestellung 3454 Stücke: Lieferzeit 14-28 Tag (e) |
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| RQ5E040AJTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Drain-source voltage: 30V Drain current: 4A On-state resistance: 54mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ5E040AJTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Drain-source voltage: 30V Drain current: 4A On-state resistance: 54mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A |
Produkt ist nicht verfügbar |