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RQ5G040ATTCL

RQ5G040ATTCL Rohm Semiconductor

datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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Technische Details RQ5G040ATTCL Rohm Semiconductor

Description: PCH -40V -4.0A, SOT-346T, SMALL, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V.

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RQ5G040ATTCL RQ5G040ATTCL Hersteller : Rohm Semiconductor datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
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