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RQ5P035BGTCL

RQ5P035BGTCL Rohm Semiconductor

rq5p035bgtcl-e.pdf Hersteller: Rohm Semiconductor
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.83 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.42 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RQ5P035BGTCL Rohm Semiconductor

Description: 100V 3.5A TSMT3, POWER MOSFET :, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V.

Weitere Produktangebote RQ5P035BGTCL nach Preis ab 0.36 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ5P035BGTCL RQ5P035BGTCL Hersteller : ROHM Semiconductor rq5p035bgtcl-e.pdf MOSFETs 100V 3.5A TSMT3, Power MOSFET
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.99 EUR
10+0.88 EUR
100+0.60 EUR
500+0.50 EUR
1000+0.43 EUR
3000+0.39 EUR
6000+0.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RQ5P035BGTCL RQ5P035BGTCL Hersteller : Rohm Semiconductor rq5p035bgtcl-e.pdf Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH