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RQ6A045APTCR

RQ6A045APTCR Rohm Semiconductor

datasheet?p=RQ6A045AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 17
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Technische Details RQ6A045APTCR Rohm Semiconductor

Description: MOSFET P-CH 12V 4.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V.

Weitere Produktangebote RQ6A045APTCR nach Preis ab 0.57 EUR bis 1.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ6A045APTCR RQ6A045APTCR Hersteller : ROHM Semiconductor datasheet?p=RQ6A045AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET RQ6A045AP is the low on-resistance MOSFET, built-in G-S protection diode for switching application.
auf Bestellung 2995 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.71 EUR
36+ 1.45 EUR
100+ 1.08 EUR
500+ 0.85 EUR
1000+ 0.66 EUR
3000+ 0.59 EUR
6000+ 0.57 EUR
Mindestbestellmenge: 31
RQ6A045APTCR RQ6A045APTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6A045AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
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