RQ6A045ZPTR ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs Transistor, MOSFET Pch, -12V(Vdss), -4.5A(Id), (1.2V, 1.5V Drive)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.87 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.04 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.4 EUR |
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Technische Details RQ6A045ZPTR ROHM Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 6 V.
Weitere Produktangebote RQ6A045ZPTR
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RQ6A045ZPTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 6 V |
Produkt ist nicht verfügbar |
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RQ6A045ZPTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 6 V |
Produkt ist nicht verfügbar |