RQ6C050BCTCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.25W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.6 EUR |
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Technische Details RQ6C050BCTCR Rohm Semiconductor
Description: MOSFET P-CH 20V 5A TSMT6, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1.25W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote RQ6C050BCTCR nach Preis ab 0.59 EUR bis 2.08 EUR
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RQ6C050BCTCR | Hersteller : ROHM Semiconductor |
MOSFETs Pch -20V -5A Si MOSFET |
auf Bestellung 3220 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ6C050BCTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 5A TSMT6 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |