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RQ6E030ATTCR

RQ6E030ATTCR ROHM Semiconductor

rq6e030attcr_e-1873344.pdf
Hersteller: ROHM Semiconductor
MOSFETs Pch -30V -3A Middle Power MOSFET
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.72 EUR
100+0.5 EUR
500+0.39 EUR
1000+0.32 EUR
3000+0.27 EUR
9000+0.25 EUR
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Technische Details RQ6E030ATTCR ROHM Semiconductor

Description: MOSFET P-CH 30V 3A TSMT6, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V.

Weitere Produktangebote RQ6E030ATTCR nach Preis ab 0.41 EUR bis 1.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ6E030ATTCR RQ6E030ATTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E030ATTCR RQ6E030ATTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3A TSMT6
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH