Produkte > ROHM SEMICONDUCTOR > RQ6E045BNTCR
RQ6E045BNTCR

RQ6E045BNTCR Rohm Semiconductor


datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 29 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RQ6E045BNTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 4.5A TSMT, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V.

Weitere Produktangebote RQ6E045BNTCR nach Preis ab 0.21 EUR bis 1.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ6E045BNTCR RQ6E045BNTCR ROHM Semiconductor datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs SOT457 N-CH 30V 4.5A
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.01 EUR
10+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E045BNTCR RQ6E045BNTCR Rohm Semiconductor datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
28+0.65 EUR
100+0.32 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E045BNTCR datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045BNTCR
Hersteller: ROHM Semiconductor
MOSFETs SOT457 N-CH 30V 4.5A
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.01 EUR
10+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E045BNTCR datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.65 EUR
100+0.32 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH