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RQ6E045TNTR

RQ6E045TNTR Rohm Semiconductor

datasheet?p=RQ6E045TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
23+0.77 EUR
100+0.6 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
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Technische Details RQ6E045TNTR Rohm Semiconductor

Description: MOSFET N-CH 30V 4.5A TSMT6, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V.

Weitere Produktangebote RQ6E045TNTR nach Preis ab 0.33 EUR bis 1.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ6E045TNTR RQ6E045TNTR Hersteller : ROHM Semiconductor datasheet?p=RQ6E045TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Nch 30V 4.5A Small Signal MOSFET
auf Bestellung 5726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.06 EUR
10+0.75 EUR
100+0.56 EUR
500+0.48 EUR
1000+0.42 EUR
3000+0.37 EUR
6000+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E045TNTR RQ6E045TNTR Hersteller : Rohm Semiconductor datasheet?p=RQ6E045TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
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Im Einkaufswagen  Stück im Wert von  UAH