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RQ6E060ATTCR

RQ6E060ATTCR ROHM Semiconductor

rq6e060attcr_e-1873310.pdf Hersteller: ROHM Semiconductor
MOSFETs RQ6E060AT is low on-resistance MOSFET for switching and load switch.
auf Bestellung 2731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.24 EUR
10+1.08 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.53 EUR
3000+0.47 EUR
6000+0.45 EUR
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Technische Details RQ6E060ATTCR ROHM Semiconductor

Description: MOSFET P-CH 30V 6A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V.

Weitere Produktangebote RQ6E060ATTCR nach Preis ab 0.61 EUR bis 1.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ6E060ATTCR RQ6E060ATTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 6A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.79 EUR
500+0.61 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E060ATTCR RQ6E060ATTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 6A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
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