RQ6E060ATTCR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -6.0A(Id), (4.5V, 6.0V Drive)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.44 EUR |
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Technische Details RQ6E060ATTCR ROHM Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA.
Weitere Produktangebote RQ6E060ATTCR nach Preis ab 0.61 EUR bis 1.94 EUR
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RQ6E060ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 6A TSMT6 Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 693 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ6E060ATTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.94 EUR |
| 15+ | 1.21 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |