RQ6E080AJTCR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET RQ6E080AJ is low on - resistance and small surface mount package MOSFET for switching application.
| Anzahl | Preis |
|---|---|
| 2+ | 1.48 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
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Technische Details RQ6E080AJTCR ROHM Semiconductor
Description: MOSFET N-CH 30V 8A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.5V @ 2mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ6E080AJTCR nach Preis ab 0.58 EUR bis 1.81 EUR
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RQ6E080AJTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A TSMT6 Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 2mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 728 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ6E080AJTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A TSMT6 Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 2mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
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