RQ6L035ATTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -60V -3.5A POWER MOSFET - RQ
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
| 9000+ | 0.5 EUR |
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Technische Details RQ6L035ATTCR Rohm Semiconductor
Description: PCH -60V -3.5A POWER MOSFET - RQ, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V.
Weitere Produktangebote RQ6L035ATTCR nach Preis ab 0.64 EUR bis 1.5 EUR
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RQ6L035ATTCR | Hersteller : Rohm Semiconductor |
Description: PCH -60V -3.5A POWER MOSFET - RQ Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V |
auf Bestellung 14990 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ6L035ATTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Power dissipation: 1.25W Kind of package: reel; tape On-state resistance: 87mΩ Gate charge: 22nC Type of transistor: P-MOSFET Drain current: -6.5A Drain-source voltage: -60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ6L035ATTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Power dissipation: 1.25W Kind of package: reel; tape On-state resistance: 87mΩ Gate charge: 22nC Type of transistor: P-MOSFET Drain current: -6.5A Drain-source voltage: -60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Polarisation: unipolar |
Produkt ist nicht verfügbar |