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RQ6P020ATTCR

RQ6P020ATTCR Rohm Semiconductor

rq6p020attcr-e.pdf Hersteller: Rohm Semiconductor
Description: PCH -100V -2A POWER MOSFET: RQ6P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 4710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
18+0.98 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RQ6P020ATTCR Rohm Semiconductor

Description: PCH -100V -2A POWER MOSFET: RQ6P, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V.

Weitere Produktangebote RQ6P020ATTCR nach Preis ab 0.38 EUR bis 1.44 EUR

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RQ6P020ATTCR RQ6P020ATTCR Hersteller : ROHM Semiconductor rq6p020attcr-e.pdf MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive)
auf Bestellung 2185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+1.03 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
3000+0.42 EUR
6000+0.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RQ6P020ATTCR RQ6P020ATTCR Hersteller : Rohm Semiconductor rq6p020attcr-e.pdf Description: PCH -100V -2A POWER MOSFET: RQ6P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH