RQ7E110AJTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 11A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V, Power Dissipation (Max): 1.5W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 10mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V.