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RQ7G080BGTCR

RQ7G080BGTCR ROHM Semiconductor

datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET LOW POWER MOSFET
auf Bestellung 5091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.42 EUR
100+1.10 EUR
500+0.93 EUR
1000+0.85 EUR
3000+0.73 EUR
9000+0.68 EUR
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Technische Details RQ7G080BGTCR ROHM Semiconductor

Description: NCH 40V 8A, TSMT8, POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V.

Weitere Produktangebote RQ7G080BGTCR nach Preis ab 0.78 EUR bis 1.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ7G080BGTCR RQ7G080BGTCR Hersteller : Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
auf Bestellung 3100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
15+1.18 EUR
100+0.89 EUR
500+0.78 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
RQ7G080BGTCR RQ7G080BGTCR Hersteller : Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH