| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
| 3000+ | 0.73 EUR |
| 9000+ | 0.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RQ7G080BGTCR ROHM Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ7G080BGTCR nach Preis ab 0.78 EUR bis 1.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RQ7G080BGTCR | Hersteller : Rohm Semiconductor |
 Description: NCH 40V 8A, TSMT8, POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 3100 Stücke: Lieferzeit 10-14 Tag (e) |
|