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RQ7L055BGTCR

RQ7L055BGTCR Rohm Semiconductor

datasheet?p=RQ7L055BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: NCH 60V 5.5A, TSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.44 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 10
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Technische Details RQ7L055BGTCR Rohm Semiconductor

Description: NCH 60V 5.5A, TSMT8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V.

Weitere Produktangebote RQ7L055BGTCR nach Preis ab 0.68 EUR bis 1.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ7L055BGTCR Hersteller : ROHM Semiconductor datasheet?p=RQ7L055BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET MOSFET
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.74 EUR
10+ 1.42 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.8 EUR
3000+ 0.68 EUR
Mindestbestellmenge: 2
RQ7L055BGTCR RQ7L055BGTCR Hersteller : Rohm Semiconductor datasheet?p=RQ7L055BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 5.5A, TSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
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