| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| 3000+ | 0.6 EUR |
| 6000+ | 0.56 EUR |
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Technische Details RQ7L055BGTCR ROHM Semiconductor
Description: NCH 60V 5.5A, TSMT8, POWER MOSFE, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: N-Channel.
Weitere Produktangebote RQ7L055BGTCR nach Preis ab 0.84 EUR bis 2.75 EUR
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RQ7L055BGTCR | Rohm Semiconductor |
 Description: NCH 60V 5.5A, TSMT8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V |
auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ7L055BGTCR |
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Hersteller: Rohm Semiconductor
Description: NCH 60V 5.5A, TSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Description: NCH 60V 5.5A, TSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
auf Bestellung 2958 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 11+ | 1.74 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.84 EUR |