Weitere Produktangebote RQA0002DNSTB-E nach Preis ab 7.77 EUR bis 7.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| RQA0002DNSTB-E | Renesas |
Description: RQA0002DNS - N CHANNEL MOSFET Packaging: Bulk Package / Case: 3-DFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 750mV @ 1mA Supplier Device Package: 2-HWSON (5x4) Vgs (Max): ±5V Drain to Source Voltage (Vdss): 16 V Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V |
auf Bestellung 9270 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQA0002DNSTB-E |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RQA0002DNSTB-E |
Hersteller: Renesas
Description: RQA0002DNS - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: 2-HWSON (5x4)
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
Description: RQA0002DNS - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: 2-HWSON (5x4)
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
auf Bestellung 9270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 7.77 EUR |
| RQA0002DNSTB-E |
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)