RQA0002DNSTB-E Renesas
Hersteller: Renesas
Description: RQA0002DNS - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: 2-HWSON (5x4)
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
Description: RQA0002DNS - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: 2-HWSON (5x4)
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
auf Bestellung 9270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 6.53 EUR |
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Technische Details RQA0002DNSTB-E Renesas
Description: RQA0002DNS - N CHANNEL MOSFET, Packaging: Bulk, Package / Case: 3-DFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 750mV @ 1mA, Supplier Device Package: 2-HWSON (5x4), Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RQA0002DNSTB-E |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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RQA0002DNSTB-E Produktcode: 127608 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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