RQA0005QXDQS#H1 Renesas Electronics Corporation


RQA0005QXDQS_Rev1.00_10-16-06.pdf
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 16V 800MA UPAK
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 0 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±5V
Supplier Device Package: UPAK
Vgs(th) (Max) @ Id: 750mV @ 1mA
Power Dissipation (Max): 9W (Tc)
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RQA0005QXDQS#H1 Renesas Electronics Corporation

Description: MOSFET N-CH 16V 800MA UPAK, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 0 V, Drain to Source Voltage (Vdss): 16 V, Vgs (Max): ±5V, Supplier Device Package: UPAK, Vgs(th) (Max) @ Id: 750mV @ 1mA, Power Dissipation (Max): 9W (Tc), Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).