Technische Details RQA0009TXDQS#H1 Renesas
Description: MOSFET N-CH 16V 3.2A UPAK, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: UPAK, Part Status: Obsolete, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V.
Weitere Produktangebote RQA0009TXDQS#H1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
RQA0009TXDQS#H1 | Hersteller : Renesas |
UPAK-4/Silicon N-Channel RF MOS FET RQA0009 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||
RQA0009TXDQS#H1 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 16V 3.2A UPAK Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: UPAK Part Status: Obsolete Vgs (Max): ±5V Drain to Source Voltage (Vdss): 16 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V |
Produkt ist nicht verfügbar |
||
RQA0009TXDQS#H1 | Hersteller : Renesas Electronics | Renesas Electronics |
Produkt ist nicht verfügbar |