RQA0011DNS#G0 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 16V 3.8A 2HWSON
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±5V
Part Status: Obsolete
Supplier Device Package: 2-HWSON (5x4)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Power Dissipation (Max): 15W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-DFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details RQA0011DNS#G0 Renesas Electronics Corporation
Description: MOSFET N-CH 16V 3.8A 2HWSON, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V, Drain to Source Voltage (Vdss): 16 V, Vgs (Max): ±5V, Part Status: Obsolete, Supplier Device Package: 2-HWSON (5x4), Vgs(th) (Max) @ Id: 750mV @ 1mA, Power Dissipation (Max): 15W (Tc), Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 2-DFN Exposed Pad, Packaging: Tape & Reel (TR).