Produkte > ROHM SEMICONDUCTOR > RRH050P03GZETB
RRH050P03GZETB

RRH050P03GZETB Rohm Semiconductor


datasheet?p=RRH050P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 373 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.62 EUR
13+ 1.42 EUR
100+ 1.09 EUR
Mindestbestellmenge: 11
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Technische Details RRH050P03GZETB Rohm Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8, Power dissipation: 2W, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Pulsed drain current: -20A, Gate charge: 17nC, Polarisation: unipolar, Drain current: -5A, Kind of channel: enhanced, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, On-state resistance: 50mΩ, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote RRH050P03GZETB

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RRH050P03GZETB RRH050P03GZETB Hersteller : ROHM SEMICONDUCTOR rrh050p03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRH050P03GZETB RRH050P03GZETB Hersteller : ROHM SEMICONDUCTOR rrh050p03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Produkt ist nicht verfügbar