RRH050P03GZETB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
Description: MOSFET P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.62 EUR |
13+ | 1.42 EUR |
100+ | 1.09 EUR |
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Technische Details RRH050P03GZETB Rohm Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8, Power dissipation: 2W, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Pulsed drain current: -20A, Gate charge: 17nC, Polarisation: unipolar, Drain current: -5A, Kind of channel: enhanced, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, On-state resistance: 50mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RRH050P03GZETB
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RRH050P03GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RRH050P03GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |