RRL025P03TR

RRL025P03TR Rohm Semiconductor


rrl025p03.pdf Hersteller: Rohm Semiconductor
Trans MOSFET P-CH Si 30V 2.5A 6-Pin TUMT T/R
auf Bestellung 4208 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
395+0.4 EUR
397+ 0.38 EUR
500+ 0.33 EUR
1000+ 0.3 EUR
3000+ 0.28 EUR
Mindestbestellmenge: 395
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Technische Details RRL025P03TR Rohm Semiconductor

Description: MOSFET P-CH 30V 2.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V.

Weitere Produktangebote RRL025P03TR nach Preis ab 0.48 EUR bis 1.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RRL025P03TR RRL025P03TR Hersteller : Rohm Semiconductor rrl025p03.pdf Trans MOSFET P-CH Si 30V 2.5A 6-Pin TUMT T/R
auf Bestellung 1307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
244+0.64 EUR
254+ 0.6 EUR
500+ 0.55 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 244
RRL025P03TR RRL025P03TR Hersteller : Rohm Semiconductor rrl025p03.pdf Trans MOSFET P-CH Si 30V 2.5A 6-Pin TUMT T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
244+0.64 EUR
254+ 0.6 EUR
500+ 0.55 EUR
1000+ 0.51 EUR
2500+ 0.48 EUR
Mindestbestellmenge: 244
RRL025P03TR RRL025P03TR Hersteller : Rohm Semiconductor RRL025P03.pdf Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.7 EUR
Mindestbestellmenge: 3000
RRL025P03TR RRL025P03TR Hersteller : ROHM Semiconductor ROHM_S_A0001071501_1-2561404.pdf MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
auf Bestellung 3462 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.45 EUR
44+ 1.21 EUR
100+ 0.95 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
3000+ 0.56 EUR
Mindestbestellmenge: 36
RRL025P03TR RRL025P03TR Hersteller : Rohm Semiconductor RRL025P03.pdf Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 6049 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.6 EUR
100+ 1.23 EUR
500+ 0.97 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15