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RRQ020P03TCR

RRQ020P03TCR ROHM Semiconductor

datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET Trans MOSFET P-CH 30V 2A
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.65 EUR
10+0.56 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.25 EUR
3000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 5
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Technische Details RRQ020P03TCR ROHM Semiconductor

Description: MOSFET P-CH 30V 2A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.

Weitere Produktangebote RRQ020P03TCR nach Preis ab 0.25 EUR bis 0.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RRQ020P03TCR RRQ020P03TCR Hersteller : Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
32+0.57 EUR
100+0.39 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
RRQ020P03TCR RRQ020P03TCR Hersteller : Rohm Semiconductor rrq020p03tcr-e.pdf Trans MOSFET P-CH 30V 2A 6-Pin TSMT T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
175+0.85 EUR
250+0.78 EUR
500+0.73 EUR
1000+0.68 EUR
2500+0.63 EUR
Mindestbestellmenge: 175
Im Einkaufswagen  Stück im Wert von  UAH
RRQ020P03TCR RRQ020P03TCR Hersteller : Rohm Semiconductor rrq020p03tcr-e.pdf Trans MOSFET P-CH 30V 2A 6-Pin TSMT T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
175+0.85 EUR
250+0.78 EUR
500+0.73 EUR
1000+0.68 EUR
2500+0.63 EUR
Mindestbestellmenge: 175
Im Einkaufswagen  Stück im Wert von  UAH
RRQ020P03TCR RRQ020P03TCR Hersteller : Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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