RS1DLHR3G

RS1DLHR3G Taiwan Semiconductor Corporation


RS1AL%20SERIES_N2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 200V 800MA SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details RS1DLHR3G Taiwan Semiconductor Corporation

Description: DIODE STD 200V 800MA SUB SMA, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Sub SMA, Current - Average Rectified (Io): 800mA, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).

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RS1DLHR3G RS1DLHR3G Hersteller : Taiwan Semiconductor RS1AL_SERIES_M15-1918430.pdf Rectifiers 150ns, 0.8A, 200V, Fast Recovery Rectifier
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