RS1E130GNTB Rohm Semiconductor
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.93 EUR |
| 200+ | 0.69 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RS1E130GNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V, Power Dissipation (Max): 3W (Ta), 22.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V.
Weitere Produktangebote RS1E130GNTB nach Preis ab 0.54 EUR bis 1.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RS1E130GNTB | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 30V 13A 8-Pin HSOP EP T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
RS1E130GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
RS1E130GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||
 |
RS1E130GNTB | Hersteller : ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
Produkt ist nicht verfügbar |