RS1E150GNTB

RS1E150GNTB ROHM Semiconductor


rs1e150gntb-e-1873201.pdf Hersteller: ROHM Semiconductor
MOSFET 4.5V Drive Nch MOSFET
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.25 EUR
10+1.08 EUR
100+0.81 EUR
500+0.64 EUR
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Technische Details RS1E150GNTB ROHM Semiconductor

Description: MOSFET N-CH 30V 15A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 22W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V.

Weitere Produktangebote RS1E150GNTB nach Preis ab 0.45 EUR bis 1.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RS1E150GNTB RS1E150GNTB Hersteller : Rohm Semiconductor datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 2225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.50 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
RS1E150GNTB Hersteller : ROHM SEMICONDUCTOR datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RS1E150GNTB SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1E150GNTB RS1E150GNTB Hersteller : Rohm Semiconductor datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH