| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
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Technische Details RS1E170GNTB ROHM Semiconductor
Description: MOSFET N-CH 30V 17A 8-HSOP, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 23W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), FET Type: N-Channel.
Weitere Produktangebote RS1E170GNTB nach Preis ab 0.42 EUR bis 0.99 EUR
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RS1E170GNTB | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 17A 8-HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
auf Bestellung 1960 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E170GNTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 17A 8-HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: MOSFET N-CH 30V 17A 8-HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |