auf Bestellung 2493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.60 EUR |
| 500+ | 0.50 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
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Technische Details RS1E170GNTB ROHM Semiconductor
Description: MOSFET N-CH 30V 17A 8-HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V, Power Dissipation (Max): 3W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V.
Weitere Produktangebote RS1E170GNTB nach Preis ab 0.42 EUR bis 0.99 EUR
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RS1E170GNTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 30V 17A 8-HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
auf Bestellung 1960 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E170GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 17A 8-HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
Produkt ist nicht verfügbar |