RS1E220ATTB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 22A/76A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.92 EUR |
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Technische Details RS1E220ATTB1 Rohm Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V.
Weitere Produktangebote RS1E220ATTB1 nach Preis ab 1.92 EUR bis 5.81 EUR
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RS1E220ATTB1 | Hersteller : ROHM Semiconductor |
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auf Bestellung 6334 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E220ATTB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 22A/76A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V |
auf Bestellung 5781 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E220ATTB1 | Hersteller : ROHM SEMICONDUCTOR |
RS1E220ATTB1 SMD P channel transistors |
Produkt ist nicht verfügbar |