RS1E220ATTB1 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -22.0A(Id), (4.5V, 6.0V Drive)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.45 EUR |
| 2500+ | 2.28 EUR |
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Technische Details RS1E220ATTB1 ROHM Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS1E220ATTB1 nach Preis ab 2.49 EUR bis 6.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RS1E220ATTB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 22A/76A 8HSOP Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 2mA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2219 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E220ATTB1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.76 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.49 EUR |