RS1E220ATTB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 22A/76A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.93 EUR |
| 5000+ | 1.86 EUR |
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Technische Details RS1E220ATTB1 Rohm Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V.
Weitere Produktangebote RS1E220ATTB1 nach Preis ab 1.94 EUR bis 4.31 EUR
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RS1E220ATTB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 22A/76A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V |
auf Bestellung 8384 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E220ATTB1 | Hersteller : ROHM Semiconductor |
MOSFET -30V P-CHANNEL -76A |
auf Bestellung 7781 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E220ATTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -76A Pulsed drain current: -88A Power dissipation: 34W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| RS1E220ATTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -76A Pulsed drain current: -88A Power dissipation: 34W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |