RS1E260ATTB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 26A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 2500+ | 2.03 EUR |
| 5000+ | 1.99 EUR |
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Technische Details RS1E260ATTB1 Rohm Semiconductor
Description: MOSFET P-CH 30V 26A/80A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 15 V.
Weitere Produktangebote RS1E260ATTB1 nach Preis ab 2.31 EUR bis 6.32 EUR
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RS1E260ATTB1 | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -26.0A(Id), (4.5V, 6.0V Drive) |
auf Bestellung 4490 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E260ATTB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 26A/80A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 15 V |
auf Bestellung 7154 Stücke: Lieferzeit 10-14 Tag (e) |
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