RS1E280BNTB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.53 EUR |
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Technische Details RS1E280BNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS1E280BNTB nach Preis ab 0.53 EUR bis 2.02 EUR
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RS1E280BNTB | Hersteller : ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
auf Bestellung 8446 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E280BNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4683 Stücke: Lieferzeit 10-14 Tag (e) |
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