RS1E280BNTB

RS1E280BNTB Rohm Semiconductor


datasheet?p=RS1E280BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
5000+0.53 EUR
7500+0.52 EUR
Mindestbestellmenge: 2500
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Technische Details RS1E280BNTB Rohm Semiconductor

Description: MOSFET N-CH 30V 28A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V, Power Dissipation (Max): 3W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V.

Weitere Produktangebote RS1E280BNTB nach Preis ab 0.52 EUR bis 1.99 EUR

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RS1E280BNTB RS1E280BNTB Hersteller : ROHM Semiconductor datasheet?p=RS1E280BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 18999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.46 EUR
10+1.28 EUR
100+0.89 EUR
500+0.74 EUR
1000+0.63 EUR
2500+0.53 EUR
5000+0.52 EUR
Mindestbestellmenge: 2
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RS1E280BNTB RS1E280BNTB Hersteller : Rohm Semiconductor datasheet?p=RS1E280BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 28A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
auf Bestellung 10762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 9
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RS1E280BNTB Hersteller : ROHM SEMICONDUCTOR datasheet?p=RS1E280BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RS1E280BNTB SMD N channel transistors
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