auf Bestellung 2168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.59 EUR |
| 5000+ | 0.57 EUR |
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Technische Details RS1E280GNTB ROHM Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V, Power Dissipation (Max): 3W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.
Weitere Produktangebote RS1E280GNTB nach Preis ab 0.91 EUR bis 1.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RS1E280GNTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 30V 28A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E280GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E280GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 31W Drain current: 80A Pulsed drain current: 112A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RS1E280GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
Produkt ist nicht verfügbar |
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| RS1E280GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 31W Drain current: 80A Pulsed drain current: 112A |
Produkt ist nicht verfügbar |