RS1E321GNTB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 32A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.54 EUR |
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Technische Details RS1E321GNTB1 Rohm Semiconductor
Description: MOSFET N-CH 30V 32A/80A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V.
Weitere Produktangebote RS1E321GNTB1 nach Preis ab 1.65 EUR bis 3.98 EUR
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RS1E321GNTB1 | Hersteller : ROHM Semiconductor |
MOSFETs RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching. |
auf Bestellung 2472 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E321GNTB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 32A/80A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E321GNTB1 | Hersteller : ROHM SEMICONDUCTOR |
RS1E321GNTB1 SMD N channel transistors |
Produkt ist nicht verfügbar |