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RS1E350BNTB1

RS1E350BNTB1 ROHM Semiconductor

rs1e350bntb-e.pdf Hersteller: ROHM Semiconductor
MOSFET MOSFET
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Technische Details RS1E350BNTB1 ROHM Semiconductor

Description: NCH 30V 80A POWER MOSFET: RS1E35, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V.

Weitere Produktangebote RS1E350BNTB1 nach Preis ab 2.37 EUR bis 5.70 EUR

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RS1E350BNTB1 RS1E350BNTB1 Hersteller : Rohm Semiconductor rs1e350bntb-e.pdf Description: NCH 30V 80A POWER MOSFET: RS1E35
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.70 EUR
10+3.82 EUR
100+2.86 EUR
500+2.48 EUR
1000+2.37 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RS1E350BNTB1 RS1E350BNTB1 Hersteller : Rohm Semiconductor rs1e350bntb-e.pdf Description: NCH 30V 80A POWER MOSFET: RS1E35
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH