RS1E350GNTB Rohm Semiconductor

Description: MOSFET N-CH 30V 35A/80A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).