RS1E350GNTB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.44 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
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Technische Details RS1E350GNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V.
Weitere Produktangebote RS1E350GNTB nach Preis ab 2.24 EUR bis 5.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RS1E350GNTB | ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in |
auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E350GNTB |
|
Hersteller: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.13 EUR |
| 10+ | 3.83 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 2.24 EUR |