RS1E350GNTB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.05 EUR |
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Technische Details RS1E350GNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS1E350GNTB nach Preis ab 1.88 EUR bis 4.54 EUR
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RS1E350GNTB | ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in |
auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E350GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 35A/80A 8HSOP Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1E350GNTB |
|
Hersteller: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in
MOSFETs 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.31 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.88 EUR |
| RS1E350GNTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.54 EUR |
| 10+ | 3.77 EUR |
| 100+ | 3 EUR |
| 500+ | 2.54 EUR |
| 1000+ | 2.15 EUR |