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RS1G150MNTB

RS1G150MNTB Rohm Semiconductor

rs1g150mntb-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RS1G150MNTB Rohm Semiconductor

Description: MOSFET N-CH 40V 15A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V.

Weitere Produktangebote RS1G150MNTB nach Preis ab 0.51 EUR bis 1.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RS1G150MNTB RS1G150MNTB Hersteller : Rohm Semiconductor rs1g150mntb-e.pdf Trans MOSFET N-CH 40V 15A 8-Pin HSOP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
208+0.69 EUR
250+0.64 EUR
500+0.59 EUR
1000+0.55 EUR
2500+0.51 EUR
Mindestbestellmenge: 208
Im Einkaufswagen  Stück im Wert von  UAH
RS1G150MNTB RS1G150MNTB Hersteller : ROHM Semiconductor rs1g150mntb-e.pdf MOSFETs 4.5V Drive Nch MOSFET
auf Bestellung 4502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.52 EUR
10+1.25 EUR
100+0.97 EUR
500+0.81 EUR
1000+0.67 EUR
2500+0.63 EUR
5000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RS1G150MNTB RS1G150MNTB Hersteller : Rohm Semiconductor rs1g150mntb-e.pdf Description: MOSFET N-CH 40V 15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.27 EUR
100+0.98 EUR
500+0.8 EUR
1000+0.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
RS1G150MNTB RS1G150MNTB Hersteller : Rohm Semiconductor rs1g150mntb-e.pdf Trans MOSFET N-CH 40V 15A 8-Pin HSOP EP T/R
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RS1G150MNTB Hersteller : Rohm Semiconductor rs1g150mntb-e.pdf Trans MOSFET N-CH 40V 15A 8-Pin HSOP EP T/R
Produkt ist nicht verfügbar
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RS1G150MNTB Hersteller : ROHM SEMICONDUCTOR rs1g150mntb-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1G150MNTB Hersteller : ROHM SEMICONDUCTOR rs1g150mntb-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH