| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.05 EUR |
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Technische Details RS1G180MNTB ROHM Semiconductor
Description: MOSFET N-CH 40V 18A/80A 8HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
Weitere Produktangebote RS1G180MNTB nach Preis ab 1.07 EUR bis 3.26 EUR
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RS1G180MNTB | Rohm Semiconductor |
 Description: MOSFET N-CH 40V 18A/80A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V |
auf Bestellung 1793 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1G180MNTB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.07 EUR |