RS1G260MNTB Rohm Semiconductor
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 2.24 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.29 EUR |
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Technische Details RS1G260MNTB Rohm Semiconductor
Description: MOSFET N-CH 40V 26A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V.
Weitere Produktangebote RS1G260MNTB nach Preis ab 1.37 EUR bis 4.59 EUR
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RS1G260MNTB | Hersteller : ROHM Semiconductor |
 MOSFETs 4.5V Drive Nch MOSFET |
auf Bestellung 2459 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G260MNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 26A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V |
auf Bestellung 2288 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G260MNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 26A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V |
Produkt ist nicht verfügbar |
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| RS1G260MNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W |
Produkt ist nicht verfügbar |