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RS1G260MNTB

RS1G260MNTB Rohm Semiconductor

rs1g260mntb-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 40V 26A 8-Pin HSOP EP T/R
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+1.60 EUR
500+1.26 EUR
1000+1.13 EUR
Mindestbestellmenge: 112
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Technische Details RS1G260MNTB Rohm Semiconductor

Description: MOSFET N-CH 40V 26A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V.

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RS1G260MNTB RS1G260MNTB Hersteller : ROHM Semiconductor rs1g260mntb-e.pdf MOSFETs 4.5V Drive Nch MOSFET
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.53 EUR
100+1.83 EUR
500+1.49 EUR
1000+1.40 EUR
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RS1G260MNTB RS1G260MNTB Hersteller : Rohm Semiconductor rs1g260mntb-e.pdf Description: MOSFET N-CH 40V 26A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+2.97 EUR
100+2.04 EUR
500+1.64 EUR
1000+1.52 EUR
Mindestbestellmenge: 4
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RS1G260MNTB Hersteller : ROHM SEMICONDUCTOR rs1g260mntb-e.pdf RS1G260MNTB SMD N channel transistors
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RS1G260MNTB RS1G260MNTB Hersteller : Rohm Semiconductor rs1g260mntb-e.pdf Description: MOSFET N-CH 40V 26A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH