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RS1G300GNTB

RS1G300GNTB Rohm Semiconductor

rs1g300gntb-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 30A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.48 EUR
Mindestbestellmenge: 2500
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Technische Details RS1G300GNTB Rohm Semiconductor

Description: MOSFET N-CH 40V 30A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V.

Weitere Produktangebote RS1G300GNTB nach Preis ab 1.38 EUR bis 4.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RS1G300GNTB RS1G300GNTB Hersteller : Rohm Semiconductor rs1g300gntb-e.pdf Trans MOSFET N-CH 40V 30A 8-Pin HSOP EP T/R
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
83+1.89 EUR
100+ 1.74 EUR
250+ 1.61 EUR
500+ 1.49 EUR
1000+ 1.38 EUR
Mindestbestellmenge: 83
RS1G300GNTB RS1G300GNTB Hersteller : Rohm Semiconductor rs1g300gntb-e.pdf Trans MOSFET N-CH 40V 30A 8-Pin HSOP EP T/R
auf Bestellung 2124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
83+1.89 EUR
100+ 1.74 EUR
250+ 1.61 EUR
500+ 1.49 EUR
1000+ 1.38 EUR
Mindestbestellmenge: 83
RS1G300GNTB RS1G300GNTB Hersteller : Rohm Semiconductor rs1g300gntb-e.pdf Description: MOSFET N-CH 40V 30A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V
auf Bestellung 16767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.29 EUR
100+ 2.72 EUR
500+ 2.3 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 6
RS1G300GNTB RS1G300GNTB Hersteller : ROHM Semiconductor rs1g300gntb-e.pdf MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 1439 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.89 EUR
13+ 4.06 EUR
100+ 3.25 EUR
500+ 2.76 EUR
1000+ 2.32 EUR
2500+ 2.2 EUR
5000+ 2.13 EUR
Mindestbestellmenge: 11
RS1G300GNTB Hersteller : ROHM SEMICONDUCTOR rs1g300gntb-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
RS1G300GNTB Hersteller : ROHM SEMICONDUCTOR rs1g300gntb-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar