RS1L120GNTB

RS1L120GNTB ROHM Semiconductor


rs1l120gntb-e Hersteller: ROHM Semiconductor
MOSFET RS1L120GN is low on - resistance MOSFET for Switching.
auf Bestellung 15600 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.03 EUR
16+ 3.35 EUR
100+ 2.68 EUR
250+ 2.47 EUR
500+ 2.25 EUR
1000+ 1.93 EUR
2500+ 1.83 EUR
Mindestbestellmenge: 13
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Technische Details RS1L120GNTB ROHM Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 36A, Pulsed drain current: 48A, Power dissipation: 27W, Case: HSOP8, Gate-source voltage: ±20V, On-state resistance: 19.8mΩ, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote RS1L120GNTB

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RS1L120GNTB RS1L120GNTB Hersteller : Rohm Semiconductor rs1l120gntb-e Description: RS1L120GN IS LOW ON - RESISTANCE
auf Bestellung 2415 Stücke:
Lieferzeit 10-14 Tag (e)
RS1L120GNTB Hersteller : ROHM SEMICONDUCTOR rs1l120gntb-e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RS1L120GNTB RS1L120GNTB Hersteller : Rohm Semiconductor rs1l120gntb-e Description: RS1L120GN IS LOW ON - RESISTANCE
Produkt ist nicht verfügbar
RS1L120GNTB Hersteller : ROHM SEMICONDUCTOR rs1l120gntb-e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar