RS1L120GNTB ROHM Semiconductor
auf Bestellung 15600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.81 EUR |
| 250+ | 1.67 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.24 EUR |
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Technische Details RS1L120GNTB ROHM Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8, Case: HSOP8, Mounting: SMD, Kind of package: reel; tape, Gate-source voltage: ±20V, Drain-source voltage: 60V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 26nC, On-state resistance: 19.8mΩ, Power dissipation: 27W, Drain current: 36A, Pulsed drain current: 48A.
Weitere Produktangebote RS1L120GNTB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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RS1L120GNTB | Hersteller : Rohm Semiconductor |
 Description: RS1L120GN IS LOW ON - RESISTANCE |
auf Bestellung 2415 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1L120GNTB | Hersteller : Rohm Semiconductor |
Description: RS1L120GN IS LOW ON - RESISTANCE |
Produkt ist nicht verfügbar |
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| RS1L120GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 26nC On-state resistance: 19.8mΩ Power dissipation: 27W Drain current: 36A Pulsed drain current: 48A |
Produkt ist nicht verfügbar |