| Anzahl | Preis |
|---|---|
| 1+ | 5.84 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.39 EUR |
| 2500+ | 2.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RS1L151ATTB1 ROHM Semiconductor
Description: PCH -60V -56A, HSOP8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V.
Weitere Produktangebote RS1L151ATTB1 nach Preis ab 2.36 EUR bis 6.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RS1L151ATTB1 | Hersteller : Rohm Semiconductor |
 Description: PCH -60V -56A, HSOP8, POWER MOSFPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V |
auf Bestellung 2243 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
RS1L151ATTB1 | Hersteller : Rohm Semiconductor |
Description: PCH -60V -56A, HSOP8, POWER MOSF Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V |
Produkt ist nicht verfügbar |