RS1L151ATTB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -60V -56A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.21 EUR |
| 5000+ | 2.12 EUR |
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Technische Details RS1L151ATTB1 Rohm Semiconductor
Description: PCH -60V -56A, HSOP8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V.
Weitere Produktangebote RS1L151ATTB1 nach Preis ab 2.34 EUR bis 4.54 EUR
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RS1L151ATTB1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -60V -56A, HSOP8, Power MOSFET |
auf Bestellung 24538 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1L151ATTB1 | Hersteller : Rohm Semiconductor |
Description: PCH -60V -56A, HSOP8, POWER MOSF Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V |
auf Bestellung 10197 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1L151ATTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -56A; Idm: -60A; 40W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -56A Pulsed drain current: -60A Power dissipation: 40W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| RS1L151ATTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -56A; Idm: -60A; 40W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -56A Pulsed drain current: -60A Power dissipation: 40W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |