RS1L180GNTB Rohm Semiconductor

Description: MOSFET N-CH 60V 18A/68A 8HSOP, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive.