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RS1L180GNTB

RS1L180GNTB Rohm Semiconductor

rs1l180gntb-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 18A Automotive AEC-Q101 8-Pin HSOP EP T/R
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+2.18 EUR
100+2.01 EUR
250+1.86 EUR
500+1.72 EUR
1000+1.6 EUR
Mindestbestellmenge: 67
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Technische Details RS1L180GNTB Rohm Semiconductor

Description: MOSFET N-CH 60V 18A/68A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 8-HSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote RS1L180GNTB nach Preis ab 1.6 EUR bis 4.79 EUR

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RS1L180GNTB RS1L180GNTB Hersteller : Rohm Semiconductor rs1l180gntb-e.pdf Trans MOSFET N-CH 60V 18A Automotive AEC-Q101 8-Pin HSOP EP T/R
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+2.18 EUR
100+2.01 EUR
250+1.86 EUR
500+1.72 EUR
1000+1.6 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
RS1L180GNTB RS1L180GNTB Hersteller : ROHM Semiconductor rs1l180gntb-e.pdf MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 18.0A(Id), (4.5V Drive)
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.79 EUR
10+3.68 EUR
100+2.82 EUR
500+2.34 EUR
1000+2.01 EUR
2500+1.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RS1L180GNTB Hersteller : ROHM SEMICONDUCTOR rs1l180gntb-e.pdf RS1L180GNTB SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1L180GNTB RS1L180GNTB Hersteller : Rohm Semiconductor rs1l180gntb-e.pdf Description: MOSFET N-CH 60V 18A/68A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-HSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1L180GNTB RS1L180GNTB Hersteller : Rohm Semiconductor rs1l180gntb-e.pdf Description: MOSFET N-CH 60V 18A/68A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-HSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH