RS1L180GNTB ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 5.09 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.13 EUR |
| 1000+ | 1.87 EUR |
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Technische Details RS1L180GNTB ROHM Semiconductor
Description: MOSFET N-CH 60V 18A/68A 8HSOP, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive.
Weitere Produktangebote RS1L180GNTB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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RS1L180GNTB | Rohm Semiconductor |
 Description: MOSFET N-CH 60V 18A/68A 8HSOPQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RS1L180GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 18A/68A 8HSOP Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RS1L180GNTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 18A/68A 8HSOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 18A/68A 8HSOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1L180GNTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 18A/68A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Description: MOSFET N-CH 60V 18A/68A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH