RS1L180GNTB Rohm Semiconductor
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 2.16 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.58 EUR |
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Technische Details RS1L180GNTB Rohm Semiconductor
Description: MOSFET N-CH 60V 18A/68A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 8-HSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote RS1L180GNTB nach Preis ab 1.58 EUR bis 4.79 EUR
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RS1L180GNTB | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 60V 18A Automotive AEC-Q101 8-Pin HSOP EP T/R |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1L180GNTB | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 18.0A(Id), (4.5V Drive) |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1L180GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Pulsed drain current: 72A Power dissipation: 39W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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RS1L180GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 18A/68A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 8-HSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS1L180GNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 18A/68A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 8-HSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| RS1L180GNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Pulsed drain current: 72A Power dissipation: 39W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |