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RS1P600BHTB1

RS1P600BHTB1 Rohm Semiconductor

rs1p600bhtb1-e.pdf Hersteller: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
10+4.11 EUR
100+2.95 EUR
500+2.42 EUR
1000+2.25 EUR
Mindestbestellmenge: 3
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Technische Details RS1P600BHTB1 Rohm Semiconductor

Description: NCH 100V 60A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V.

Weitere Produktangebote RS1P600BHTB1 nach Preis ab 2.31 EUR bis 6.58 EUR

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RS1P600BHTB1 RS1P600BHTB1 Hersteller : ROHM Semiconductor rs1p600bhtb1-e.pdf MOSFETs HSOP8 100V 60A N-CH MOSFET
auf Bestellung 4575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.58 EUR
10+4.33 EUR
100+3.04 EUR
500+2.50 EUR
1000+2.32 EUR
2500+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RS1P600BHTB1 RS1P600BHTB1 Hersteller : Rohm Semiconductor rs1p600bhtb1-e.pdf Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH