auf Bestellung 4420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.51 EUR |
| 10+ | 3.84 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.32 EUR |
| 2500+ | 2.15 EUR |
| 5000+ | 2.09 EUR |
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Technische Details RS1P600BHTB1 ROHM Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V.
Weitere Produktangebote RS1P600BHTB1 nach Preis ab 2.47 EUR bis 5.98 EUR
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RS1P600BHTB1 | Hersteller : Rohm Semiconductor |
 Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V |
auf Bestellung 2412 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1P600BHTB1 | Hersteller : ROHM |
Description: ROHM - RS1P600BHTB1 - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 8800 µohm, HSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 8800µohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1P600BHTB1 | Hersteller : ROHM |
Description: ROHM - RS1P600BHTB1 - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 8800 µohm, HSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 8800µohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1P600BHTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 60A, HSOP8, POWER MOSFE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V |
Produkt ist nicht verfügbar |